On Oct. 3, 1950, three Bell Labs scientists received a patent for a "three-electrode circuit element" that would usher in the ...
Bell Labs scientists behind the invention of the transistor would, at last, have the U.S. Patent in their hands.
Abstract: We present the first study of the effects of radiation on low-frequency noise in a novel complementary (npn+pnp) silicon-germanium (SiGe) HBT BiCMOS technology. In order to manipulate the ...
Abstract: Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion. Bipolar transistors are ...