Abstract: We present the first study of the effects of radiation on low-frequency noise in a novel complementary (npn+pnp) silicon-germanium (SiGe) HBT BiCMOS technology. In order to manipulate the ...
Abstract: The impact of 63.3 MeV proton and 10 keV X-ray irradiation on the DC and AC performance of complementary SiGe HBTs on thick-film SOI is investigated. Proton and X-ray induced changes in the ...
A Planet Analog article, “ 2N3904: Why use a 60-year-old transistor? ” by Bill Schweber, inspired some interest in this old ...
Live Science on MSN
Science history: Invention of the transistor ushers in the computing era — Oct. 3, 1950
On Oct. 3, 1950, three Bell Labs scientists received a patent for a "three-electrode circuit element" that would usher in the ...
Engineeringness on MSN
Transistors Explained: Switching and Amplification Basics
This video explains what transistors are and how they function as electronic switches and amplifiers. As a core component of ...
† Organic Materials and Devices (OMD), Department of Materials Science, University Erlangen-Nürnberg, Martensstrasse 07, 91058 Erlangen, Germany ‡ Institute for Organic Chemistry II, University ...
You may study part-time during your final semester. You may also be eligible to apply for a PGWP if you’re in one of the special case groups. If you complete your study program in less time than the ...
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