Abstract: In this work, a multiple-Vt solution with a Vt range of -200mV and a tight Vt distribution is demonstrated to enable the design flexibility for a 3nm CMOS technology. This is achieved by ...
Abstract: In this paper, the effect of the work function of the double metal gate inside DRAM cells on the row hammer (RHE) and passing gate effect (PGE) was analyzed. The RHE and PGE were observed to ...
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